PART |
Description |
Maker |
EM620FU8B |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM641FP16 |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
K6F2008T2E |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
EM6323FR8ES-45L EM7323FR8ES-45L EM6645FR8ES-45L EM |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
http:// Emerging Memory & Logic Solutions Inc
|
KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EM644FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
IC62LV2568L-70TI IC62LV2568L IC62LV2568L-100B IC62 |
256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM 256K × 8低功耗和低成本吓的CMOS静态RAM
|
Lattice Semiconductor, Corp. ICSI[Integrated Circuit Solution Inc]
|
K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM 256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http:// MOSEL[Mosel Vitelic, Corp] Mosel Vitelic, Corp.
|
V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|